(See Researcher Profile in Google Scholar or ORCID)
(See Researcher Profile in Google Scholar or ORCID)
Journal articles(88) 
Proceedings(19) International conference(128) 
Patent(5) 
Domestic presentation(17)
Refereed journal articles (Selected: 50) <All: 88>
[2012 SCI impact factor]
| 50. | S. Hosaka, T. Akahane, M Huda, T. Komori, H. Zhang, Y. Yin “Ordering of 6-nm-sized nanodot arrays with 10-nm-pitch using self-assembled block copolymers along electron beam-drawn guide-lines” Microelectron. Eng, 123, 54-57 (2014). [Impact factor: 1.224] |
| 49. | H. Zhang, M. Huda, T. Komori, Y. Zhang, Y. Yin, S. Hosaka “Estimation of pattern resolution using NaCl high-contrast developer by Monte Carlo simulation of electron beam lithography” Microelectron. Eng, 121, 142-146 (2014). [Impact factor: 1.224] |
| 48. | S. Hosaka, T. Akahane, M. Huda, T. Komori, H. Zhang, and Y. Yin “Controlling of 6-nm-sized and 10-nm-pitched dot arrays ordered along narrow guide lines using PS-PDMS self-assembly” ACS Applied Materials & Interfaces, 6, 6208-6211 (2014). [Impact factor: 5.008] |
| 47. | H. Zhang, S. Hosaka, and Y. Yin “Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10 nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control” Appl. Phys. Lett, 104, 093107 1-4 (2014). [Impact factor: 3.794] |
| 46. | M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Attempts to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer” Int. J. of Nanotechnology, 11, 425-433 (2014). [Impact factor: 1.087] |
| 45. | R. I. Alip, Z. Mohamad, Y. Yin, and S. Hosaka “Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory” Int. J. of Nanotechnology, 11, 389-395 (2014). [Impact factor: 1.087] |
| 44. | Y. Yin, R. Kobayashi, S. Hosaka “Recrystallization process controlled by staircase pulse in phase change memory”[PDF] Microelectron. Eng, 113, 61-65 (2014). [Impact factor: 1.224] |
| 43. | H. Zhang, T. Komori, Y. Zhang, Y. Yin, and S. Hosaka “Simulation of fine resist profile formation by electron beam drawing and development with solubility rate based on energy deposition distribution” Jpn. J. Appl. Phys., 52, 126504 1-5 (2013). [Impact factor: 1.067] |
| 42. | Y. Yin, H. Zhang, S. Hosaka, Y. Liu, and Q. Yu “Volume-change-free GeTeN film for high-performance phase-change memory”[PDF] J. Phys. D: Appl. Phys., 46, 505311 1-5 (2013). [Impact factor: 2.528] |
| 41. | S. G. Hu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor” Appl. Phys. Lett, 103, 133701 1-4 (2013). [Impact factor: 3.794] |
| 40. | Y. Yin, S. Hosaka, W. I. Park, Y. S. Jung, K. J. Lee, B. K. You, Y. Liu, and Q. Yu “Current density enhancement nano-contact phase-change memory for low writing current”[PDF] Appl. Phys. Lett, 103, 033116 1-5 (2013). [Impact factor: 3.794] |
| 39. | S. G. Hu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor” Appl. Phys. Lett, 102, 183510 1-4 (2013). [Impact factor: 3.794] |
| 38. | W. I. Park, B. K. You, B. H. Mun, H. K. Seo, J. Y. Lee, S. Hosaka, Y. Yin, C. Ross, K. J. Lee, Y. S. Jung “Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction” ACS Nano, 7, 2651-2658 (2013). [Impact factor: 12.062] |
| 37. | S. G. Hu, H. T. Wu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, Y. Yin, and S. Hosaka “Design of an electronic synapse with spike time dependent plasticity based on resistive memory device” J. Appl. Phys., 113, 114502 1-4 (2013). [Impact factor: 2.210] |
| 36. | S. G. Hu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Realization of transient memory-loss with NiO-based resistive switching device” Applied Physics A ., 109, 349-352 (2012). [Impact factor: 1.545] |
| 35. | Y. Yin, and S. Hosaka “Controlled promotion of crystallization for application to multilevel phase-change memory”[PDF] Appl. Phys. Lett., 100, 253503 1-4 (2012). [Impact factor: 3.794] |
| 34. | M. Huda, J. Liu, Y. Yin, and S. Hosaka “Fabrication of 5-nm-sized nanodots using self-assemble of polystyrene-poly(dimethyl siloxane)” Jpn. J. Appl. Phys., 51, 06FF10 1-5 (2012). [Impact factor: 1.067] |
| 33. | T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin, and S. Hosaka “EB lithography of 15×15 nm2 pitched nanodot arrays with a dot size of <10nm using high development contrast salty developer” Jpn. J. Appl. Phys., 51, 06FB02 1-4 (2012). [Impact factor: 1.067] |
| 32. | Y. Yin, and S. Hosaka “Low-reset-current ring-confined-chalcogenide phase-change memory”[PDF] Jpn. J. Appl. Phys., 51, 104202 1-5 (2012). [Impact factor: 1.067] |
| 31. | Y. Yin, and S. Hosaka “Controllable crystallization in phase-change memory for low-power multilevel storage”[PDF] Jpn. J. Appl. Phys., 51, 064101 1-4 (2012). [Impact factor: 1.067] |
| 30. | J. M. Yoon, D. O. Shin, Y. Yin, H. K. Seo, D. Kim, J. H. Jin, Y. T. Kim, B-S Bae, S. O. Kim, and J. Y. Lee “Fabrication of high-density In3Sb1Te2 phase-change nanoarray on glass-fabric reinforced flexible substrate” Nanotechnology, 23, 255301 1-9 (2012). [Impact factor: 3.842] |
| 29. | J. M. Yoon, H. Y. Jeong, S. H. Hong, Y. Yin, H. S. Moon, S. J. Jeong, J. H. Han, Y. I. Kim, Y. T. Kim, H. Lee, S. O. Kim, and J. Y. Lee “Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory” Journal of Materials Chemistry, 22, 1347-1351 (2012). [Impact factor: 6.101] |
| 28. | Y. Yin, T. Noguchi, and S. Hosaka “Possibility of freely achievable multilevel storage of phase-change memory by staircase-shaped pulse programming”[PDF] Jpn. J. Appl. Phys., 50, 105201 1-3 (2011). [Impact factor: 1.067] |
| 27. | M. Huda, T. Akahane, T. Tamura, Y. Yin, and S. Hosaka “Fabrication of 10-nm-order block copolymer self-assembled nanodots for high-density magnetic recording” Jpn. J. Appl. Phys., 50, 06GG06 1-5 (2011). [Impact factor: 1.067] |
| 26. | T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Orientation-controlled and long-range-ordered self-assembled nanodot array for ultrahigh-density bit-patterned media” Jpn. J. Appl. Phys., 50, 06GG04 1-4 (2011). [Impact factor: 1.067] |
| 25. | S. Hosaka, T. Akahane, M Huda, T. Tamura, Y. Yin, N. Kihara, Y. Kamata, and A. Kitsutsu “Long-range-ordering of self-assembled block copolymer nanodots using EB-drawn guide line and post mixing template” Microelectron. Eng, 88, 2571-2575 (2011). [Impact factor: 1.224] |
| 24. | Y. Yin, and S. Hosaka “Multilevel storage in lateral phase-change memory by promotion of nanocrystallization”[PDF] Microelectron. Eng, 88, 2794-2796 (2011). [Impact factor: 1.224] |
| 23. | S. Hosaka, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi “Nanometer resolution stress measurement of the Si gate using illumination collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe” Nanotechnology, 22, 025206 1-7 (2011). [Impact factor: 3.842] |
| 22. | S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, and Y. Yin “Possibility of forming 18-nm-pitch ultrahigh density fine dot arrays for 2 Tbit/in.2 patterned media using 30-keV electron beam lithography” Jpn. J. Appl. Phys, 49, 046503 1-3 (2010). [Impact factor: 1.067] |
| 21. | S. Hosaka, H. Koyabu, M. Noro, K. Takizawa, H. Sone, and Y. Yin “Observation of Si pattern sidewall using inclination atomic force microscope for evaluation of line edge roughness” J. Nanoscience and Nanotechnology, 10, 4522-4527 (2010). [Impact factor: 1.149] |
| 20. | Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Programming margin enlargement by material engineering for multi-level storage in phase-change memory”[PDF] Appl. Phys. Lett., 95, 133503 1-3 (2009). [Impact factor: 3.794] |
| 19. | Y. Yin, K. Ota, T. Noguchi, H. Ohno, H. Sone, and S. Hosaka “Multi-level-storage in N-doped Sb2Te3 based lateral phase-change memory with an additional top TiN layer”[PDF] Jpn. J. Appl. Phys., 48, 04C063 1-4 (2009). [Impact factor: 1.067] |
| 18. | Y. Yin, K. Ota, N. Higano, H. Sone, and S. Hosaka “Multi-level storage in lateral top-heater phase-change memory” IEEE Electron Device Lett., 29, 876-878 (2008). [Impact factor: 2.849] |
| 17. | Y. Yin, N. Higano, H. Sone, and S. Hosaka “Ultramultiple-level storage in TiN/SbTeN double-layer cell for high-density non-volatile memory”[PDF] Appl. Phys. Lett., 92, 163509 1-3 (2008). [Impact factor: 3.794] |
| 16. | S. Hosaka, Z. Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone “Extremely small proximity effect in 30 keV electron beam drawing with thin calixarene resist for 20×20 nm2 pitch dot arrays” Appl. Phys. Express, 1, 027003 1-3 (2008). [Impact factor: 2.731] |
| 15. | S. Hosaka, Z. Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone “Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/in2 storage” Microelectron. Eng., 85, 774-777 (2008). [Impact factor: 1.224] |
| 14. | Y. Yin, D. Niida, K. Ota, H. Sone, and S. Hosaka “Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory” Rev. Sci. Instrum., 78, 126101 1-3 (2007). [Impact factor: 1.602] |
| 13. | Y. Yin, H. Sone, and S. Hosaka “Lateral SbTeN based multi-layer phase change memory for multi-state storage”[PDF] Microelectron. Eng., 84, 2901-2906 (2007). [Impact factor: 1.224] |
| 12. | Y. Yin, H. Sone, and S. Hosaka “Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory”[PDF] J. Appl. Phys., 102, 064503 1-5 (2007). [Impact factor: 2.210] |
| 11. | S. Hosaka, H. Sano, M. Shirai, Y. Yin, and H. Sone “Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in2 storage” Microelectron. Eng., 84, 802-805 (2007). [Impact factor: 1.224] |
| 10. | Y. Yin, H. Sone, and S. Hosaka “A chalcogenide-based device with potential for multi-state storage”[PDF] Microelectron. J., 38, 695-699 (2007). [Impact factor: 0.912] |
| 9. | S. Hosaka, K. Miyauchi, T. Tamura, Y. Yin, and H. Sone “Prototype of phase-change channel transistor for both nonvolatile memory and current control” IEEE Trans. Electron Devices, 54, 517-523 (2007). [Impact factor: 2.062] |
| 8. | Y. Yin, H. Sone, and S. Hosaka “Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides”[PDF] Jpn. J. Appl. Phys., 45, 8600-8603 (2006). [Impact factor: 1.067] |
| 7. | Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka “A novel lateral phase-change random access memory characterized by ultra low reset current and power consumption”[PDF] Jpn. J. Appl. Phys., 45, L726-L729 (2006). [Impact factor: 2.731] (APEX) |
| 6. | Y. Yin, H. Sone, and S. Hosaka “Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modeling”[PDF] Jpn. J. Appl. Phys., 45, 6177-6181 (2006). [Impact factor: 1.067] |
| 5. | Y. Yin, H. Sone, and S. Hosaka “Memory effect in metal-chalcogenide-metal structure for ultrahigh-density nonvolatile memories”[PDF] Jpn. J. Appl. Phys., 45, 4951-4954 (2006). [Impact factor: 1.067] |
| 4. | Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka “Electrical properties on phase change and channel current control of ultrathin phase change channel transistor memory”[PDF] Jpn. J. Appl. Phys., 45, 3238-3242 (2006). [Impact factor: 1.067] |
| 3. | Y. Yin, H. Sone, and S. Hosaka “Dependence of electrical properties of thin GeSbTe and AgInSbTe films on annealing”[PDF] Jpn. J. Appl. Phys., 44, 6208-6212 (2005). [Impact factor: 1.067] |
| 2. | Y. Yin, J.F. Jiang, Q.Y. Cai, and B.C. Cai “Coulomb blockade in an ultra-thin Ti nanowire at room temperature” Chin. J. Electron. (English Edition), 12, 451-453 (2003). [Impact factor: 0.147] |
| 1. | Y. Yin, J.F. Jiang, Q.Y. Cai, and B.C. Cai “Scanning tunneling microscopy and in situ spectroscopy of ultra thin Ti films and nano sized TiOx dots induced by STM” Appl. Surf. Sci., 199, 319-327 (2002). [Impact factor: 2.112] |
Proceedings (19)
| 19. | B. Mun, W. Park, Y. Yin, B. You, J. Yun, K. Kim, Y. Jung, and K. Lee “Low Power Phase Change Memory via Block Copolymer Self-assembly Technology” 2013 MRS Spring Meeting, (2013) (California, USA). |
| 18. | Y. Yin, R. I. Alip, and S. Hosaka “Current-driven crystallization promotion for multilevel storage in phase-change memory” Proceedings of the 24rd Symposium on Phase Change Oriented Science (PCOS2012), 17-20 (2012) (Shizuoka, Japan) |
| 17. | S. Hosaka, T. Noguchi, S. Kobayashi, R. I. B. Alip, and Y. Yin “Random access multi-levels phase changing using pulse modulation” the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), (2011) (Atami, Japan) |
| 16. | M. Huda, Y. Yin, and S. Hosaka “Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording” AIP Con. Proc. Vol. 1415, 79-82 (2011) (Bali, Indonesia) |
| 15. | S. Hosaka, T. Akabane, M. Huda, T. Tamura, and Y. Yin “Long-range-ordering of nanodot arrays using self-assembly and post and line mixing templates” AIP Con. Proc. Vol. 1415, 102-106 (2011) (Bali, Indonesia) |
| 14. | Y. Yin, K. Ota, T. Noguchi, H. Sone, and S. Hosaka “Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer” Extended Abstracts of the International Conference on Solid State Devices and Materials, 1152-1153 (2008) (Tsukuba, Japan). |
| 13. | S. Hosaka, K. Ohta, T. Noguchi, H. Sone and Y. Yin “Small consumption power and multi-level storage in lateral type phase-change memory with a top heater” PCOS 2008, 48-52 (2008) (Izu, Japan) |
| 12. | Y. Yin, and S. Hosaka “Multi-level storage in phase-change memory: from multi-layer to single layer” The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), (2010) (Atami, Japan) |
| 11. | Y. Yin, D. Niida, K. Ohta, A. Miyachi, M. Asai, N. Higano, H. Sone, and S. Hosaka “In situ SEM observation of grain formation and growth induced by electrical pulses in lateral Ge2Sb2Te5 phase-change memory” 2007 MRS Spring Meeting, 0997-I12-05 (2007) (California, USA). |
| 10. | Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, D. Niida, H. Sone, and S. Hosaka “Characteristics of N-doped Sb2Te3 films by X-ray diffraction and resistance measurement for phase-change memory” 2007 MRS Spring Meeting, 0997-I10-11 (2007) (California, USA). |
| 9. | Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, H. Sone, and S. Hosaka “Prototypical lateral multi-state phase-change memory with a multi-layer media” 2007 IEEE International Conference on Electron Devices and Solid-State Circuits, 149-152 (2007) (Taiwan, China). |
| 8. | S. Hosaka, Z. bin Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone “Nano-dot and pit arrays with a pitch of 25 nm x 25nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/in2 storage” 33rd International Conference on Micro- and Nano-Engineering, 129-130 (2007) (Copenhagen, Denmark). |
| 7. | Y. Yin, K. Ohta, H. Sone, and S. Hosaka “A novel multi-channel phase-change memory cell for multi-state storage with high controllability” 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 778-780 (2006) (Shanghai, China). |
| 6. | Y. Yin, D. Niida, N. Higano, A. Miyachi, H. Sone, and S. Hosaka “Ultra low operation current lateral phase-change memory” Extended Abstracts of the International Conference on Solid State Devices and Materials, 562-563 (2006) (Yokohama, Japan). |
| 5. | Y. Yin, D. Niida, H. Sone, and S. Hosaka “Annealing effect of phase change and current control in phase change channel transistor memory” 2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), 644-645 (2005) (Kobe, Japan). |
| 4. | Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka “Thickness dependences of phase change and channel current control in phase-change channel transistor” 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, 617-620 (2005) (Hongkong, China). |
| 3. | Y. Yin, H. Sone, and S. Hosaka “Electric properties of thin GeSbTe and AgInSbTe films by annealing” Proceedings of the 16th Symposium Phase Change Optical Information Storage PCOS 2004, 23-26 (2004) ( Osaka, Japan). |
| 2. | S. Hosaka, K. Miyauchi, T. Tamura, Y. Yin, and H. Sone “Proposal of memory transistor using a phase change and nano-size effects for high density memory array” Proceedings of 15th Symposium on Phase Change Optical Information Storage (Ed. M. Okuda), 52-55 (2003) (Atami, Japan). |
| 1. | Y. Yin, J.F. Jiang, and Q.Y. Cai “Single electron memory effect in TiOx nano-structure” 2001 6th international conference on Solid-state and integrated circuit technology proceedings, 1415-1417 (2001) (Shanghai, China). |
International conference (128)
| 128. | Y. Yin, and S. Hosaka “N-doped GeTe for High-Performance Phase-Change Memory” the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), Adelaide, Australia (Feb. 2014) |
| 127. | Y. Yin, and S. Hosaka “Reduction of Write Current in Phase-Change Memory by Incorporating Self-Assembled Nanostructures” the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), Adelaide, Australia (Feb. 2014) |
| 126. | H. Zhang, M. Huda, J. Liu, Y. Zhang, Y. Yin, and S. Hosaka “Long Range Ordering of Nanodots with Sub-10-nm-Pitch and 5-nm-dot Size using EB-drawn Guide Line and Self-assembly of Polystyrene-Poly(dimethyl siloxane)” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013) |
| 125. | T. Jin, R. Takahashi, Y. Yin, and S. Hosaka “Prototype of atomic force microscope with high resolution optical microscope for observing of magnetic nanodot arrays” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013) |
| 124. | M. Huda, H. Zhang, J. Liu, Y. Yin, and S. Hosaka “Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodot Array” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013) |
| 123. | R. Takahashi, J. Tao, Zulfakri Bin. Mohanmad, H. Zhang, M. Huda, V. Nhat, Y. Yin, and S. Hosaka “Observation of magnetic nanodot arrays by using scanning near-field polarization microscope” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013) |
| 122. | Y. Yin, and S. Hosaka “Nano-contact phase-change memory” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013) |
| 121. | A. Nagao, Y. Yin, and S. Hosaka “Computational analysis of heavy ion-DNA interaction using molecular dynamics method” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013) |
| 120. | S. Hosaka, R. Takahashi, T. Jin, Z. Mohamad, H. Zhang, M. Huda, Hayato. Sone, and Y. Yin “Scanning Near-field Polarization Microscopy for magnetization of nanometer-sized magnetic column” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013) |
| 119. | Y. Yin, T. Itagawa, and S. Hosaka “Electron Beam Lithography for Fabrication of Nano Phase-Change Memory” 2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013), Singapore (Dec. 2013) |
| 118. | S. Hosaka, H. Zhang, M. Huda, and Y. Yin “Nano-contact for small power consumption in phase change memory” The 25th Symposium on Phase Change Oriented Science, Sendai, Miyagi, Japan (Nov. 2013) |
| 117. | S. Hosaka, M. Huda, H. Zhang, T. Komori, and Y. Yin “Single-nanodot Arrays and Single-nanohalf-pitch Lines Formed using PS-PDMS Self-assembly and Electron Beam Drawing” 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Hakkaido, Japan (Nov. 2013) (Invited) |
| 116. | M. Huda, J. Liu, Y. Yin, and S. Hosaka “Fabrication of Ultrahigh Density 10-nm-order Sized C Nanodot Array as a Pattern-transfer Mask” 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Hakkaido, Japan (Nov. 2013) |
| 115. | Y. Yin, and S. Hosaka “Ultralow-write-current Nano-contact Phase-change Memory” 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Hakkaido, Japan (Nov. 2013) |
| 114. | M. Huda, J. Liu, Y. Yin, S. Hosaka “Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodots” 8th NANOSMAT, Granada, SPAIN (Sep. 2013) |
| 113. | H. Zhang, T. Komori, Y. Zhang, Y. Yin, and S. Hosaka, “Estimation of Pattern Resolution Using NaCl High Contrast Developer by Monte Carlo Simulation of Electron Beam Lithography” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013) |
| 112. | S. Hosaka, T. Akahane, T. Komori, M. Huda, H. Zhang, and Y. Yin, “Margin of 30-keV-EB drawing and graphoepitaxy of PS-PDMS self-assembly with EB drawn guide lines for formation of sub-10-nm-sized dot arrays” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013) |
| 111. | M. Huda, J. Liu, Y. Yin, S. Hosaka “Large Area Ultrahigh Density 10-nm-Order Sized C Nanodot Array as a Pattern-Transfer Mask” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013) |
| 110. | Y. Yin, R. Kobayashi, Y. Zhang, R. I. Alip, and S. Hosaka “Staircase pulse programming for recrystallization control in phase-change memory” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013) |
| 109. | Y. Yin, and S. Hosaka “Nano-contact phase-change memory for ultralow writing reset current” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013) |
| 108. | Y. Yin, and S. Hosaka “TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory” 5th International Conference on Mechanical and Electrical Technology (ICMET 2013), Chengdu, China (July 2013) |
| 107. | S. Hosaka, Y. Yin, T. Komori, M. Huda “Long-range Ordering of 6-nm-sized Nanodot Arrays Using Self-assemble and Eb-drawing” 7th International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (June-July 2013) |
| 106. | H. Zhang, T. Komori, S. Hosaka, Y. Yin “Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution ” 7th International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (June-July 2013) |
| 105. | Y. Yin, Y. Zhang, and S. Hosaka “Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory” 2013 MRS Spring Meeting, San Francisco, California, USA (Apr. 2013). |
| 104. | Y. Yin, and S. Hosaka “Low-Volume-Change High-Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe” 2013 MRS Spring Meeting, San Francisco, California, USA (Apr. 2013). |
| 103. | Z. Mohamad, T. Akahane, M. Huda, R. I. Alip, M. Suzuki, Y. Yin, and S. Hosaka “Nanometer effect of dot diameter for 40 nm magnetic dot pitch for patterned media prepared by EBL and ion milling and measured by Micro X-Ray Magnetic Circular Dichroism” the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), Auckland, New Zealand (Feb. 2013). |
| 102. | M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Challenge to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer” the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), Auckland, New Zealand (Feb. 2013). |
| 101. | Z. Mohamad, M. Huda, T. Komori, R. Alip, H. Zhang, Y. Yin, and S. Hosaka “Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays using 30-keV-Electron Beam Drawing, RIE and Ion milling” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 100. | R. Alip, Z. Mohamad, Y. Yin, and S. Hosaka “Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 99. | H. Zhang, T. Komori, Y. Zhang, Y. Yin, and S. Hosaka “A New Modeling of Calculating Resist Profile Based on Energy Deposition Distribution in Electron Beam Lithography” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 98. | T. Komori, M. Huda, M. Masuda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 97. | J. Liu, M. Huda, H. Zhang, Y. Yin, and S. Hosaka “Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled nanodots” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 96. | M. Huda, Z. Mohamad, T. Komori, Y. Yin, and S. Hosaka “Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 95. | S. Hosaka, T. Akahane, T. Komori, M. Huda, Y. Yin, N. Kihara, Y. Kamata, and A. Kikitsu “Fusion of top-down and bottom-up technologies for single nano-patterning ” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 94. | Y. Yin, Y. Zhang, and S. Hosaka “Fast Operation and Resistance Control in GeTe-Based Lateral Phase Change Memory” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012) |
| 93. | M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Pattern Transfer of 23-nm-Diameter Block Copolymer Self- Assembled Nanodots Using CF4 etching with Carbon Hard Mask (CHM) as Mask” Nanotechnology Applications in Energy and Environment (NAEE2012), Bandung, Indonesia (Sep. 2012). |
| 92. | Y. Yin, R. I. Alip, and S. Hosaka “Current-driven crystallization promotion for multilevel storage in phase-change memory” The 24th Symposium on Phase Change Oriented Science (PCOS 2012), Hamahatsu, Shizuoka, Japan (Nov. 2012). |
| 91. | Y. Yin, and S. Hosaka “Controlled promotion of crystallization for multilevel phase-change memory” the 38th International Micro & Nano Engineering Conference (MNE 2012), Toulouse, France (Sep. 2012) |
| 90. | Y. Yin, and S. Hosaka “Low-stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory” the 38th International Micro & Nano Engineering Conference (MNE 2012), Toulouse, France (Sep. 2012) |
| 89. | S. Hosaka, T. Akahane, M. Huda, J. Liu, Y. Yin, N. Kihara, Y. Kamata, and A. Kikitsu “Ordering of 12 nm-pitched nanodot arrays using block copolymers self-assemble and EB drawn guide line template for 5 Tbit/in2 magnetic recording” the 38th International Micro & Nano Engineering Conference (MNE 2012), Toulouse, France (Sep. 2012) |
| 88. | S. Hosaka, Z. Mohamad, T. Akahane, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki “Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD)” 2012 International Conference on Mechatronics and Intelligent Materials, Guilin, China (May 2012) |
| 87. | Y. Yin, and S. Hosaka “Multi-Level Storage Phase-Change Memory” <<Keynote Speech>> 2012 International Conference on Mechatronics and Intelligent Materials, Guilin, China (May 2012) |
| 86. | T. Okino, T. Shimada, A. Yuzawa, R. Yamamoto, N. Kihara, Y. Kamata, A. Kikitsu, T. Akahane, Y. Yin, and S. Hosaka “Evaluation of ordering of block copolymers with pre-patterned guides for bit patterned media” SPIE Advanced Lithography 2012, San Jose, California, USA (Feb. 2012) |
| 85. | Y. Yin, R. I. Alip, Y. Zhang, R. Kobayashi, and S. Hosaka “Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 84. | Z. Mohamad, T. Komori, T. Akahane, R. I. Alip, H. Zhang, Y. Yin, S. Hosaka “Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 83. | R. I. Alip, R. Kobayashi, Y. Zhang, Y. Yin, S. Hosaka “A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 82. | T. Akahane, M. Huda, Z. B. Mohamad, Y. Yin, and S. Hosaka “Improved Observation Contrast of Blockcopolymer Nanodot Pattern Using Carbon Hard Mask (CHM)” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 81. | T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin, and S. Hosaka “The Effect of Salt Development for Forming HSQ Resist Nanodot Arrays with a Pitch of 15 × 15 nm2 by 30-keV EB drawing” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 80. | H. Zhang, T. Komori, Y. Yin, S. Hosaka “Calculation of High-contrast HSQ resist using Energy Deposition Distribution in EB lithography” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 79. | S. Kurokami, Z. Mohamad, Y. Yin, S. Hosaka, T. Fuju, Y. Sueyoshi, and H. Okano “Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 78. | S. Hosaka, Z. Mohamad, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, and M. Suzuki “Nanometer-size effect of the coercive force of fine magnetic column measured by X-ray magnetic circular dichroism (XMCD)” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011) |
| 77. | S. Hosaka, T. Noguchi, S. Kobayashi, R. I. B. Alip, and Y. Yin “Random access multi-levels phase changing using pulse modulation” the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), Atami, Japan (Nov. 2011) |
| 76. | M. Huda, J. Liu, Y. Yin,and S. Hosaka “Fabrication of 6-nm Block Copolymer Self-Assembled Nanodots for Ultrahigh-Density Magnetic Recording” 24rd International Microprocesses and Nanotechnology Conference, Kyoto, Japan (Oct. 2011) |
| 75. | T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin,and S. Hosaka “EB Drawing of 15 nm × 15 nm Pitched Nanodot Arrays with a Size of <10nm using High Contrast Develope” 24rd International Microprocesses and Nanotechnology Conference, Kyoto, Japan (Oct. 2011) |
| 74. | M. Huda, Y. Yin, and S. Hosaka “Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording” The 4th Nanoscience and Nanosmposium, Bali, Indonesia (Sep. 2011) |
| 73. | S. Hosaka, T. Akahane, M Huda, T. Komori and Y. Yin “Long-range-ordering of Nanodot Arrays using Self-assembly and Post and Line Mixing Templates” The 4th Nanoscience and Nanosmposium, Bali, Indonesia (Sep. 2011) |
| 72. | S. Hosaka Z. Mohamad, M. Shirai, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki “Coercive force enhanced by nanaometer-sizing of magnetic column for patterned media and measured by X-ray magnetic circular dichroism in SR” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011). |
| 71. | H. Zhang, Y. Yin, and S. Hosaka “Estimation of Nanometer-Scale Patterning of Calixarene Resist in Electron Beam Lithography” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011). |
| 70. | Y. Yin, T. Itagawa, and S. Hosaka “10-nm-Order-Wide Nanowire Phase-Change Memory” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011). ☆ BEST POSTER AWARD 20 best posters were selected from total 890 posters by the Scientific Committee of ChinaNANO 2011 during the conference, ten for regular authors and ten for students. |
| 69. | Y. Yin, M. Huda, T. Akahane, and S. Hosaka “Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011). |
| 68. | Y. Yin, T. Itagawa, and S. Hosaka “Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory” 2011 MRS Spring Meeting, San Francisco, California, USA (Apr. 2011). |
| 67. | Y. Yin, and S. Hosaka “Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory” 2011 MRS Spring Meeting, San Francisco, California, USA (Apr. 2011). |
| 66. | Y. Yin and S. Hosaka “Characterization of N-Doped Chalcogenide Film for Application to Phase-Change Memory as Next-Generation Memory” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010) |
| 65. | R. Kobayashi, T. Noguchi, Y. Yin, and S. Hosaka “Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010) |
| 64. | M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010) |
| 63. | T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Processing” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010) |
| 62. | H. Zhang, T. Tamura, Y. Yin, and S. Hosaka “Monte Carlo Simulation of Electron Scattering Processes for High-Resolution Electron Beam Lithography” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010) |
| 61. | T. Tamura, H. Zhang, T. Akahane, M. Huda, T. Komori, Y. Yin, and S. Hosaka “Fabrication of Nanometer Sized Si Dot Arrays Using Reactive Ion Etching with Metal Dot Arrays” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010) |
| 60. | S. Hosaka, T. Takizawa, D. Terauchi, Y. Yin, and H. Sone “Pico-Newton Controlled Step-in Mode NC-AFM Using a Quadrature Demodulator and a Slim Probe in Air for CD-AFM” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010) |
| 59. | Y. Yin, and S. Hosaka “Multi-level storage in phase-change memory: from multi-layer to single layer” The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), Atami, Japan (Nov. 2010) |
| 58. | M. Huda, T. Akahane, T. Tamura, Y. Yin, and S. Hosaka “Fabrication of 10-nm Block Copolymer Self-Assembled Nanodots for Ultrahigh-Density Magnetic Recording” 23rd International Microprocesses and Nanotechnology Conference, Fukuoka, Japan (Nov. 2010). |
| 57. | T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Orientation-Controlled and Long-Range-Ordering Self-Assembled Nanodot Array for Ultrahigh-Density Bit Patterned Media” 23rd International Microprocesses and Nanotechnology Conference, Fukuoka, Japan (Nov. 2010). |
| 56. | Y. Yin, and S. Hosaka “Multilevel storage in lateral phase-change memory by promotion of nanocrystallization” The 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy (Sep. 2010) |
| 55. | S. Hosaka, T. Akahane, M. Huda, T. Tamura, and Y. Yin “Long-range-ordering of nanodot arrays using self-assembled block copolymers with EB drawn guide post and line mixing templates” The 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy (Sep. 2010) |
| 54. | S. Hosaka, T. Noguchi, and Y. Yin “Multi-levels phase change memory using pulse modulation” EPCOS 2010, Milano, Italy (Sep. 2010), Proc. EPCOS 2010, pp. 105-110. |
| 53. | M. Huda, T. Akahane, T. Tamura, Y. Yin, and S. Hosaka “Fabrication of 10-nm Block Copolymer Self-Assembled Nanodots for High-Density Magnetic Recording” the 18th Indonesian Scientific Meeting, Nagoya, Japan (Aug. 2010). |
| 52. | S. Hosaka, D. Terauchi, T. Takizawa, Y. Yin, and H. Sone “Step-in mode NC-AFM for CD measurement of fine structure in air” The 13th International Conference on Non-Contact Atomic Force Microscopy, Kanazawa, Japan (Aug. 2010) |
| 51. | Y. Yin, T. Noguchi, H. Ohno,and S. Hosaka “Ultramultiple-multi-level storage in SbTeN-based phase-change memory” The 7h International Forum on Advanced Material Science and Technology, Dalian, China (Jun. 2010) |
| 50. | S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi “Measurement of Local Stress Distribution in Fine Silicon Gate Using Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy” The 7h International Forum on Advanced Material Science and Technology, Dalian, China (Jun. 2010) |
| 49. | T. Akahane, M. Huda, Y. Yin, and S. Hosaka “Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009) |
| 48. | Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009) |
| 47. | M. Huda, Y. Yin, and S. Hosaka “Self-Assembled Nanodot Fabrication by Using Diblock Copolymer” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009) |
| 46. | T. Tamura, Y. Tanaka, T. Akahane, Y. Yin, and S. Hosaka “Fabrication of Si Dot Arrays by EB Lithography and Dry Etching for Quantum Dot Solar Cells” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009) |
| 45. | S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi “Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal probe” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009) |
| 44. | Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Material engineering in phase-change memory for low power consumption and multi-level storage” the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, Xian, China (Nov. 2009). |
| 43. | S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Yin, Y. Kondo, and J. Ariake “Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling” the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, Xian, China (Nov. 2009). |
| 42. | S. Hosaka, Y. Tanaka, Z. Mohamad, M. Shirai, H. Sano, H. Sone, and Y. Yin “Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/ in2 storage” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009). |
| 41. | Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Research on low power consumption and multi-level storage in phase-change memory” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009). |
| 40. | T. Noguchi, H. Ohno, Y. Yin, and S. Hosaka “Low power lateral phase-change memory” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009). |
| 39. | Y. Tanaka, N. Mitomi, S. Hosaka, and Y. Yin “Fine dot pattern formation on magnetic film for high density magnetic storage” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009). |
| 38. | Y. Aramomi, S. Kobuna, Y. Yin, H. Sone, and S. Hosaka, “Scanning Near-field Raman spectroscopy (SNRS) to detect the stress distribution for high spatial resolution” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009). |
| 37. | T. Tamura, Y. Tanaka, T. Akahane, Y. Yin, and S. Hosaka “Fabrication of dot arrays by EB lithography for quantum dot solar cell” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009). |
| 36. | Y. Yin, T. Noguchi, H. Ohno, K. Ota, and S. Hosaka “Multi-Level Storage in Lateral Phase-Change Memory” the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, China, 3O-2015, p. 56. (Sep. 2009). |
| 35. | S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Yin, Y. Kondo, and J. Ariake “Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling” the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, China, 5O-2061, p. 118. (Sep. 2009). |
| 34. | Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Research on low power consumption and multi-level storage in phase-change memory” the 2nd NSC-JST Nano Device Workshop, Hsinchu, Taiwan, pp.56-58 (July 2009). |
| 33. | S. Hosaka, H. Sano, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Tanaka, H. Sone,
Y. Yin “Nanomagnetic dot arrays fabrication based on electron beam drawing and its size effect” Nanomeeting-2009, Minsk, Belarus (May 2009). |
| 32. | Y. Aramomi, H. Koyabu, H. Sone, Y. Yin, S. Hosaka, E. Sato, and K. Tochigi “Near-field Raman spectroscopy using illumination-collection mode with typical AFM pyramidal probe” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009). |
| 31. | Y. Tanaka, N. Mitomi, S. Hosaka, H. Sone, and Y. Yin “Challenge to form 25 × 25 nm2 pitch dot on magnetic thin film on glass substrate for 1Tb/in2 magnetic storage” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009). |
| 30. | T. Noguchi, Y. Yin, N. Higano, K. Ota, and S. Hosaka “Lateral type phase-change memory with top heater for low-power consumption” 2nd International Workshop on Nanotechnology, Kusatsu, Japan. (Mar. 2009) |
| 29. | Y. Yin, T. Noguchi, H. Ohno, K. Ota, and S. Hosaka “Multiple-Level Storage in N-doped-SbTe Phase-Change Memory with an Additional Top TiN Layer” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009). |
| 28. | S. Hosaka, Y. Tanaka, Y. Aramomi, H. Sone, and Y. Yin “Research activities on nanotechnology in Hosaka Lab” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009). |
| 27. | S. Hosaka, K. Ohta, T. Noguchi, H. Sone and Y. Yin “Small consumption power and multi-level storage in lateral type phase-change memory with a top heater” PCOS 2008, Izu, Shizuoka, Japan pp. 48-52 (Dec. 2008). |
| 26. | S. Hosaka, M. Shirai, Z. bin Mohamad, H. Sone, and Y. Yin “Fabrication of fine magnetic column arrays by 30 keV EB lithography and ion-milling” 34th International Conference on Micro- and Nano-Engineering 2008, Athens, Greece (Sep. 2008). |
| 25. | S. Hosaka, T. Noguchi, N. Higano, K. Ota, H. Sone, and Y. Yin “Low power writing in lateral type phase-change memory” 2008 European/Phase Change and Ovonics Symposium, Prague, the Czech Republic, 2008, pp. 170 (Sep. 2008). |
| 24. | Y. Yin, K. Ota, T. Noguchi, H. Sone, and S. Hosaka “Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer” Extended Abstracts of the International Conference on Solid State Devices and Materials, Tsukuba, Ibaraki, Japan, 2008, pp. 1152-1153. (Sep. 2008). |
| 23. | Y. Yin, N. Higano, T. Noguchi, K. Ota, H. Sone, and S. Hosaka “Reactively sputtered Ti-Si-N films for application to heating layer in low-current phase-change memory” MRS International Materials Research Conference 2008, Chongqing, China, D8.3 (Jun. 2008). |
| 22. | S. Hosaka, M. Shirai, Z. Mohamad, H. Sone, and Y. Yin “20 nm x 20 nm pitch fine dot arrays formed by 30 keV EB lithography and ion-milling” MRS International Materials Research Conference 2008, Chongqing, China, D8.70 (Jun. 2008). |
| 21. | Y. Yin, N. Higano, T. Noguchi, K. Ota, H. Sone, and S. Hosaka “Ultramultiple-level storage in N-doped-Sb2Te3 phase-change memory with an additional top TiN layer” The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, Beijing, China, 2008, pp. 27 (Jun. 2008). |
| 20. | S. Hosaka, M. Shirai, Z. Mohamad, Y. Tanaka, H. Sone, and Y. Yin “Formation of 20 nm x 20 nm fine pitch dot arrays by 30 keV EB lithography” The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, Beijing, China, 2008, pp. 11 (Jun. 2008). |
| 19. | S. Hosaka, N. Higano, K. Ohta, A. Miyachi, H. Sone, and Y. Yin “Prospective of phase-change memory” 2008 MRS Spring Meeting, San Francisco, California, USA. (Invited) (Mar. 2008) |
| 18. | Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, H. Sone, and S. Hosaka “Prototypical lateral multi-state phase-change memory with a multi-layer media” 2007 IEEE International Conference on Electron Devices and Solid-State Circuits, Taiwan, China, 2007, pp.149-152 (Dec. 2007). |
| 17. | S. Hosaka, Z. bin Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone “Nano-dot and pit arrays with a pitch of 25 nm x 25nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/in2 storage” 33rd International Conference on Micro- and Nano-Engineering 2007, Copenhagen, Denmark, pp. 129-130 (Sep. 2007). |
| 16. | M. Asai, A. Miyachi, Y. Yin, H. Sone, and S. Hosaka “Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM” The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 22 (Jul. 2007). |
| 15. | K. Ota, Y. Yin, N. Higano, A. Miyachi, H. Sone, and S. Hosaka “Local heating of phase change material in PCMD” The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 62 (Jul. 2007). |
| 14. | M. Asai, A. Miyachi, Y. Yin, H. Sone, and S. Hosaka “Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM” 1st Surface and Nano Science Workshop, Taipei, Taiwan, (Jun. 2007). |
| 13. | K. Ota, Y. Yin, N. Higano, A. Miyachi, H. Sone, and S. Hosaka “Direct and indirect heating of low power lateral type PCMD” 1st Surface and Nano Science Workshop, Taipei, Taiwan, (Jun. 2007). |
| 12. | S. Hosaka, Z. bin Mohamad, H. Sano, M. Shirai, Y. Yin, and H. Sone “Nano-dot arrays with a pitch of 25 nm x 25nm written by EB writer for over 1 Tb/in2 storage” 1st Surface and Nano Science Workshop, Taipei, Taiwan, (Jun. 2007). |
| 11. | Y. Yin, D. Niida, K. Ohta, A. Miyachi, M. Asai, N. Higano, H. Sone, and S. Hosaka “In situ SEM observation of grain formation and growth induced by electrical pulses in lateral Ge2Sb2Te5 phase-change memory” 2007 MRS Spring Meeting, San Francisco, California, USA, 0997-I12-05 (Mar. 2007). |
| 10. | Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, D. Niida, H. Sone, and S. Hosaka “Characteristics of N-doped Sb2Te3 films by X-ray diffraction and resistance measurement for phase-change memory” 2007 MRS Spring Meeting, San Francisco, California, USA, 0997-I10-11 (Mar. 2007). |
| 9. | M. Asai, A. Miyachi, Y. Yin, H. Sone, and S. Hosaka “UHV NC-AFM observation of surface structure and grain size changes of Ge2Sb2Te5 films by annealing effect” The 14th International Colloquium on Scanning Probe Microscopy, Atagawa, Japan, pp. 62 (Dec. 2006). |
| 8. | Y. Yin, K. Ohta, H. Sone, and S. Hosaka “A novel multi-channel phase-change memory cell for multi-state storage with high controllability” 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, Shanghai, China, pp. 778-780 (Oct. 2006). |
| 7. | Y. Yin, D. Niida, N. Higano, A. Miyachi, H. Sone, and S. Hosaka, “Ultra low operation current lateral phase-change memory”, Extended Abstracts of the International Conference on Solid State Devices and Materials, Yokohama, Japan, pp. 562-563 (Sep. 2006). |
| 6. | A. Miyachi, Y. Yin, M. Asai, H. Sone, and S. Hosaka “Observation of chalcogenide material surface for phase change memory (PRAM) using NC-AFM” 2006 Nc-AFM International Conference, Kobe, Japan, 2006, pp. 96 (Aug. 2006). |
| 5. | Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka “Thickness dependences of phase change and channel current control in phase-change channel transistor” 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, Hongkong, China, pp. 617-620 (Dec. 2005). |
| 4. | Y. Yin, D. Niida, H. Sone, and S. Hosaka “Annealing effect of phase change and current control in phase change channel transistor memory” 2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), Kobe, Japan, pp. 644-645 (Sep. 2005). |
| 3. | Y. Yin, H. Sone, and S. Hosaka “Electric properties of thin GeSbTe and AgInSbTe films by annealing” Proceedings of the 16th Symposium Phase Change Optical Information Storage PCOS 2004, Osaka, Japan, pp. 23-26 (Oct. 2004). |
| 2. | S. Hosaka, K. Miyauchi, T. Tamura, Y. Yin, and H. Sone “Proposal of memory transistor using a phase change and nano-size effects for high density memory array” Proceedings of 15th Symposium on Phase Change Optical Information Storage (Ed. M. Okuda), Atami, Japan, pp. 52-55 (Oct. 2003). |
| 1. | Y. Yin, J.F. Jiang, and Q.Y. Cai “Single electron memory effect in TiOx nano-structure” 2001 6th international conference on Solid-state and integrated circuit technology proceedings, Shanghai, China, pp. 1415-1417 (Oct. 2001). |
Patent (5)
| 5. | 酒井武信、保坂純男、尹友、田村拓郎 “光電変換素子及びその製造方法” 特願2011-184581（2011年8月26日） |
| 4. | 保坂純男，曾根逸人，尹友，岡野晴樹 “加速度センサ” 特開2011-237390特願2010-111424（2010年5月13日） |
| 3. | 尹友，保坂純男, 曾根逸人 “メモリ装置、電子機器、相変化メモリ素子への記録方法” 特開2009-266316特願2008-115775（2008年4月25日） |
| 2. | 尹友，保坂純男, 曾根逸人 “メモリ素子、メモリセル、メモリセルアレイ及び電子機器” 特開2009-123847特願2007-294887（2007年11月13日） |
| 1. | 保坂純男, 曾根逸人、尹友 “メモリ素子、メモリセル、及びメモリセルアレイ” 特許第5201616号、特開2008-294207、特願2007-137813（2007年5月24日） |
Domestic presentation in Japan (17)
| 17. | 尹友，保坂純男 “電子線描画法及び自己組織化法を用いたナノドット形成と整列” 第7回PBW（Proton Beam Writing）研究会（日本原子力研究開発機構 高崎量子応用研究所）, 2014年3月. |
| 16. | 保坂純男，尹友 “相変化メモリの原理と将来性” 磁気記録・情報ストレージ研究会（MR）（茨城大学 日立キャンパス）, 2012年7月. [チュートリアル招待講演] |
| 15. | 小森琢哉，張慧，赤羽隆志，モハマド ズルファクリ，尹友，保坂純男 “30-KeV電子線描画法を用いた3 Tbit/in.2（ピッチ15 nm）超高密度磁気記録用ドット列の形成” 2011年秋季 第72回 応用物理学会学術講演会（山形大学）. |
| 14. | ミフタフル フダ，赤羽 隆志，田村 拓郎，尹友，保坂 純男，木原 直子，鎌田 芳幸，喜々津 哲 “高密度磁気記録のためのブロック共重合体による自己組織化10nmナノドット形成” 2010年秋季 第71回 応用物理学会学術講演会（長崎大学）. |
| 13. | 赤羽 隆志、ミフタフルフダ、田村 拓郎、尹友、保坂 純男 “高密度パターンドメディアのための電子線描画ポスト格子とガイドラインによる自己組織化パターンの規則配列制御” 2010年秋季 第71回 応用物理学会学術講演会（長崎大学）. |
| 12. | 尹友，太田和宏，野口智之，曾根逸人，保坂純男 “上部ヒータ付ラテラル型相変化メモリの多値記録” 2008年秋季 第69回応用物理学会学術講演会 (中部大学). |
| 11. | 野口智之，尹友，太田和宏，曾根逸人，保坂純男 “低消費電力化のための上部ヒーター付ラテラル相変化素子” 2008年秋季 第69回応用物理学会学術講演会 (中部大学). |
| 10. | 渋谷隆広，大西茂夫，太田和宏，尹友，保坂純男 “ＲＲＡＭスイッチング動作に及ぼすジュール加熱の影響” 2008年春季 第55回応用物理学関係連合講演会（日大）. |
| 9. | 尹友，日向野直也，太田和宏，宮地晃平，曾根逸人，保坂純男 “ラテラル型窒素ドープSbTeによる多値記録マルチレイヤー相変化メモリ” 2007年秋季, 第68回応用物理学会学術講演会（北海道工業大学）. |
| 8. | 日向野直也，尹友，宮地晃平，仁井田大輔，太田和宏，曾根逸人，保坂純男 “ヒーター層付きラテラル型相変化メモリ素子の繰り返し相変化実験” 2007年春季, 第54回応用物理学関係連合講演会（青山学院大学）. |
| 7. | 太田和宏，尹友，宮地晃平，曾根逸人，保坂純男 “ヒーター層付きラテラル型相変化メモリのジュール加熱シミュレーション” 2007年春季, 第54回応用物理学関係連合講演会（青山学院大学）. |
| 6. | 保坂純男、Yin You、仁井田大輔、宮地晃平、曽根逸人 “GSTの結晶構造および表面形状とラテラル型相変化素子の相変化制御性” シリコン材料・デバイス研究会「新型不揮発性メモリー」，機械振興会館 (2006). |
| 5. | 宮地晃平, 尹友, 淺井政宏, 仁井田大輔, 日向野直也, 太田和宏, 曾根逸人, 保坂純男 “超高真空ノンコンタクト原子間力顕微鏡によるGeSbTe薄膜の相変化に伴う表面構造の観察” 第三回21世紀COEシンポジウム、大阪大学、2006. |
| 4. | 仁井田大輔，宮地晃平，尹友，曾根逸人，保坂純男 “ラテラル型相変化抵抗素子における相変化繰り返し実験” 2006年春季 第53回応用物理学関係連合講演会（武蔵工大）. |
| 3. | 宮地晃平，尹友，仁井田大輔，曾根逸人，保坂純男 “UHV-AFMを用いた加熱前/後におけるGe2Sb2Te5薄膜の表面構造の観察” 2005年秋季 第66回応用物理学会学術講演会（徳島大）. |
| 2. | 保坂純男，曾根逸人，尹友 “相変化チャンネルを用いたメモリトランジスタの可能性” シリコン材料・デバイス研究会「新型不揮発性メモリー」，機械振興会館 (2004). |
| 1. | 保坂純男，宮内邦裕，曾根逸人，You Yin “相変化メモリトランジスタと結晶成長” 日本結晶成長学会 第34回結晶成長国内会議，東京農工大学 (2004年7月) 日本結晶成長学会誌,31(3) pp.123 ( 2004). |
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